fjpf13009 ? npn silicon transistor ? 2003 fairchild semiconductor corporation www.fairchildsemi.com fjpf13009 rev. 1.2.1 september 2014 fjpf13009 npn silicon transistor features ? high-voltage capability ? high switching speed applications ? electronic ballast ? switching regulator ? motor control ? switched mode power supply ordering information notes: 1. the affix ?-h1, h2? means the h fe classification. the suffix ?-tu? means the tube packing method. part number (1) top mark package packing method FJPF13009H1TU j13009-1 to-220f 3l rail fjpf13009h2tu j13009-2 to-220f 3l rail description the fjpf13009 is a 700 v, 12 a npn silicon epitaxial planar transistor. the fjpf13009 is available with multi- ple h fe bin classes for ease of design use. the fjpf13009 is designed for high speed switching applica- tions which utilizes the industry standard to-220f pack- age offering flexibility in design and excellent power dissipation. 1 1.base 2.collector 3.emitter to-220f
fjpf13009 ? npn silicon transistor ? 2003 fairchild semiconductor corporation www.fairchildsemi.com fjpf13009 rev. 1.2.1 2 absolute maximum ratings (2) stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. in addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. values are at t c = 25c unless otherwise noted. note: 2. these ratings are based on a maximum junction temperature of 150 c. these are steady-state limits. fairchild semiconductor should be consulted on application involving pulsed or low-duty-cycle operations. electrical characteristics values are at t c = 25c unless otherwise noted. note: 3. pulse test: pulse width 300 s, duty cycle 2% h fe classification symbol parameter value unit v cbo collector-base voltage 700 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 9 v i c collector current (dc) 12 a i cp collector current (pulse) 24 a i b base current 6 a p d total device dissipation (t c = 25c) 50 w t j junction temperature 150 c t stg storage temperature range -65 to +150 c symbol parameter conditions min. typ. max unit v ceo (sus) collector-emitter sustaining voltage i c = 10 ma, i b = 0 400 v i ebo emitter cut-off current v eb = 9 v, i c = 0 1 ma h fe1 dc current gain (3) v ce = 5 v, i c = 5 a 8 40 h fe2 v ce = 5 v, i c = 8 a 6 30 v ce (sat) collector-emitter saturation voltage (3) i c = 5 a, i b = 1 a 1.0 v i c = 8 a, i b = 1.6 a 1.5 i c = 12 a, i b = 3 a 3.0 v be (sat) base-emitter saturation voltage (3) i c = 5 a, i b = 1 a 1.2 v i c = 8 a, i b = 1.6 a 1.6 c ob output capacitance v cb = 10 v, f = 0.1 mhz 180 pf f t current gain bandwidth product v ce = 10 v, i c = 0.5 a 4 mhz t on turn-on time v cc = 125 v, i c = 8 a, i b1 = - i b2 = 1.6 a, r l = 15.6 1.1 s t stg storage time 3.0 t f fall time 0.7 classification h1 h2 h fe1 8 ~ 17 15 ~ 28
fjpf13009 ? npn silicon transistor ? 2003 fairchild semiconductor corporation www.fairchildsemi.com fjpf13009 rev. 1.2.1 3 typical performance characteristics figure 1. dc current gain figure 2. base-emitter saturation voltage and collector-emitter saturation voltage figure 3. collector output capacitance figure 4. turn-on time figure 5. turn-off time figure 6. forward bias safe operating area 0.1 1 10 100 1 10 100 v ce = 5v h fe , dc current gain i c [a], collector current 0.1 1 10 100 0.01 0.1 1 10 i c = 3 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [a], collector current 0.1 1 10 100 1000 1 10 100 1000 c ob [pf], capacitance v cb [v], collector base voltage 0.1 1 10 100 10 100 1000 10000 v cc =125v i c =5i b t d , v be (off)=5v t r t r , t d [ns], turn on time i c [a], collector current 0.1 1 10 100 100 1000 10000 v cc =125v i c =5i b t f t stg t stg , t f [ns], turn off time i c [a], collector current 1 10 100 1000 0.01 0.1 1 10 100 10 s 100 s 1 ms d c i c [a], collector current v ce [v], collector-emitter voltage
fjpf13009 ? npn silicon transistor ? 2003 fairchild semiconductor corporation www.fairchildsemi.com fjpf13009 rev. 1.2.1 4 typical performance characteristics (continued) figure 7. reverse bias safe operating area figure 8. power derating 10 100 1000 10000 0.01 0.1 1 10 100 vcc=50v, i b1 =1a, i b2 = -1a l = 1mh i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 p c [w], power dissipation t c [ o c], case temperature
fjpf13009 ? npn silicon transistor ? 2003 fairchild semiconductor corporation www.fairchildsemi.com fjpf13009 rev. 1.2.1 5 physical dimensions figure 9. to220, molded, 3-lead, full pack, eiaj sc91, straight lead % % ? % 6 ( ( 1 2 7 ( ) 0 $ $ % % % ; ? 6 ( ( 1 2 7 ( ) 1 2 7 ( 6 $ ( ; & ( 3 7 : + ( 5 ( 1 2 7 ( ' & 2 1 ) 2 5 0 6 7 2 ( , $ - 6 & $ % ' 2 ( 6 1 2 7 & 2 0 3 / < ( , $ - 6 7 ' 9 $ / 8 ( & $ / / ' , 0 ( 1 6 , 2 1 6 $ 5 ( , 1 0 , / / , 0 ( 7 ( 5 6 ' ' , 0 ( 1 6 , 2 1 6 $ 5 ( ( ; & / 8 6 , 9 ( 2 ) % 8 5 5 6 0 2 / ' ) / $ 6 + $ 1 ' 7 , ( % $ 5 3 5 2 7 5 8 6 , 2 1 6 ( ' , 0 ( 1 6 , 2 1 $ 1 ' 7 2 / ( 5 $ 1 & ( $ 6 3 ( 5 $ 6 0 ( < ) 2 3 7 , 2 1 : , 7 + 6 8 3 3 2 5 7 3 , 1 + 2 / ( 2 3 7 , 2 1 1 2 6 8 3 3 2 5 7 3 , 1 + 2 / ( * ' 5 $ : , 1 * ) , / ( 1 $ 0 ( 7 2 0 5 ( 9
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